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Dual N - Channel Field Effect Transistor MXN3312 High Density Cell Design For Power Switching

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Shenzhen Canyi Technology Co., Ltd.

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Dual N - Channel Field Effect Transistor MXN3312 High Density Cell Design For Power Switching

Brand Name : DEC

Model Number : MXN3312

MOQ : 1000PCS

Price : Negotiated

Supply Ability : 15,000,000PCS Per Day

Packaging Details : Boxed

Type : N-Channel

Package Type : Surface Mount

VDS : 30V

IDS : 12A

Standard : RoSH

Application : Power switching

Place of Origin : Jiangxi, China

Certification : RoHS

Delivery Time : 1 - 2 Weeks

Payment Terms : Telegraphic Transfer in Advance (Advance TT, T/T)

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MXN3312 Field Effect Transistor Dual N - Channel Enhancement Mode Power Mosfet

Product Description

The MXN3312 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

High density cell design fo ultra low Rdson
Fully characterized Avalanche voltage and current

Application

Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply

Bulk packaging data

0.54*45 Diodes Bulk Box: 63*21*191MM Outer Box: 42*33*24CM

0.58 Diodes Bulk Box: 84*22*195MM Outer Box: 42*33*24CM

0.54*45 Diodes Tape cassette: 255*145*75MM Outer box: 42*27.6*31CM

45 long bulk packaging: 42*33*24CM

58 long bulk packaging: 45*21*26CM

FAQ

Q: When can I get the price?

A: We will reply you ASAP. We will quote for you within 12 hours after we get your inquiry.

Q: How many kinds of products in your factory ?

A: We have a large range of products, such as Schottky Signal Diode, Schottky Barrier Diode, High Current Rectifier Diode, Fast Recovery Diode, Fast Switching Diode, Surface Mount Zener Diode and etc. Looking forward to your email.

Q:Can you customize it DIY?

A: We can help you design exclusive products according to your requirements. We have the entire service flow from product R&D design, manufacturing process to finished product packaging, welcome to sample custom.

Q: How long can I expect to get the sample?

A: It will be ready for delivery in 1 - 2 weeks, depends on the feature of your sample. The samples will be sent to you by express.

Product Tags:

mosfet power transistor

p channel transistor

Quality Dual N - Channel Field Effect Transistor MXN3312 High Density Cell Design For Power Switching for sale

Dual N - Channel Field Effect Transistor MXN3312 High Density Cell Design For Power Switching Images

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