AP50P03NF P-Channel Advanced Power MOSFET field effect high voltage transistor
AP50P03NF.pdf
The AP50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications.
General Features
V DS = -30V,I D = -50A
R DS(ON) < 18mΩ @ V GS =-4.5V
R DS(ON) < 13mΩ @ V GS =-10V
High Power and current handing capability
Lead free product is acquired
Surface mount package
Application
PWM applications
Load switch
Power management
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
| Parameter |
Symbol |
Limit |
Unit |
| Drain-Source Voltage |
VDS |
-30 |
V |
| Gate-Source Voltage |
VGS |
±20 |
V |
| Drain Current-Continuous (T C =25℃) |
I D |
-50 |
A |
| Drain Current-Continuous (T C =100℃) |
-24 |
Drain Current-Pulsed
(Note 1) |
IDM |
-80 |
A |
| Maximum Power Dissipation (T C =25℃) |
P D |
3 |
W |
| Maximum Power Dissipation (T C =100℃) |
1.3 |
Single pulse avalanche energy
(Note 5) |
EAS |
231 |
mJ |
| Operating Junction and Storage Temperature Range |
TJ,TSTG |
-55 To 150 |
℃ |
Thermal Resistance,Junction-to-Ambient
(Note 2) |
RθJA |
41.67 |
℃ /W |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
| Parameter |
Symbol |
Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
BV DSS |
V GS =0V I D =-250μA |
-30 |
-33 |
- |
V |
| Zero Gate Voltage Drain Current |
IDSS |
V DS =-30V,V GS =0V |
- |
- |
-1 |
μA |
| Gate-Body Leakage Current |
IGSS |
V GS =±20V,V DS =0V |
- |
- |
±100 |
nA |
| Gate Threshold Voltage |
VGS(th) |
V DS =V GS ,I D =-250μA |
-1 |
-1.5 |
-3 |
V |
| Drain-Source On-State Resistance |
RDS(ON) |
V GS =-10V, I D =-10A |
- |
11.5 |
15 |
mΩ |
| V GS =-4.5V, I D =-7A |
- |
18 |
25 |
mΩ |
| Forward Transconductance |
gFS |
V DS =-10V,I D =-10A |
- |
20 |
- |
S |
| Input Capacitance |
C lss |
V DS =-15V,V GS =0V,F=1.0MHz |
- |
1750 |
- |
PF |
| Output Capacitance |
Coss |
- |
215 |
- |
PF |
| Reverse Transfer Capacitance |
C rss |
- |
180 |
- |
PF |
| Turn-on Delay Time |
td(on) |
V DD =-15V, ID=-10A,V GS =-10V,
R GEN =1Ω
|
- |
9 |
- |
nS |
| Turn-on Rise Time |
t r |
- |
8 |
- |
nS |
| Turn-Off Delay Time |
td(off) |
- |
28 |
- |
nS |
| Turn-Off Fall Time |
t f |
- |
10 |
- |
nS |
| Total Gate Charge |
Q g |
V DS =-15V,I D =-10A,V GS =-10V |
- |
24 |
- |
nC |
| Gate-Source Charge |
Q gs |
- |
3.5 |
- |
nC |
| Gate-Drain Charge |
Q gd |
- |
6 |
- |
nC |
Diode Forward Current
(Note 2) |
I S |
|
- |
- |
-12 |
A |
Diode Forward Voltage
(Note 3) |
VSD |
V GS =0V,I S =-12A |
- |
- |
-1.2 |
V |
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. E AS condition: Tj=25℃,V DD =-15V,V G =10V,L=0.5mH,Rg=25Ω, I AS =-34A
For more information please refer to the attachment, or contact us:
Contact: Roundy
Tel: 86-755-82853859
Fax: 86-755-83229774
Email:Roundy@doublelight.com.cn
Wechat:15216951191
Skype:Roundy@doublelight.com.cn
Whatsapp:+86 15216951191
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MOSFET Field Effect High Voltage Transistor AP50P03NF P Channel Advanced Power Images
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